Crystallization effects in annealed thin Ge-Se films photodiffused with Ag

被引:30
作者
Mitkova, M. [1 ]
Kozicki, M. N. [1 ]
Kim, H. C. [1 ]
Alford, T. L. [1 ]
机构
[1] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA
关键词
amorphous semiconductors; Raman scattering; X-ray diffraction; Raman spectroscopy;
D O I
10.1016/j.jnoncrysol.2005.09.051
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Ge-Se glasses with composition ranging from Ge20Se80 to Ge40Se60 photodoped with Ag and annealed at moderate temperatures are investigated. Raman spectroscopy suggests that Ag photodiffusion brings about the formation of a Ge-Se backbone that is deficient in Se and that the structure is depolymerized due to the extraction of Se during the formation of crystalline products. X-ray diffraction shows that after Ag diffusion into the glass, nanocrystals of Ag2Se and Ag8GeSe6 form, depending on the composition of the host. The crystal size is affected by the molecular clustering of the host. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:1986 / 1990
页数:5
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