SILVER PHOTODIFFUSION IN AMORPHOUS GEXSE100-X

被引：23

作者：

KLUGE, G ^{[1
]}

THOMAS, A ^{[1
]}

KLABES, R ^{[1
]}

GROTZSCHEL, R ^{[1
]}

SUPTITZ, P ^{[1
]}

机构：

[1] ACAD SCI GDR,CENT INST NUCL RES ROSSENDORF,O-8051 DRESDEN,GERMANY

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1990年 / 124卷 / 2-3期

关键词：

D O I：

10.1016/0022-3093(90)90262-K

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Photoinduced diffusion of silver in amorphous GexSe100-x layers (x = 10, 20, 25, 30, 33 1 3, 40) at room temperature was investigated by Rutherford backscattering spectroscopy. The measured diffusion profiles are quantitatively analyzed by considering photodoping as an intercalation reaction (solid state reaction) of electron/silver ion pairs with the amorphous host. This intercalation reaction is governed by a percolation mechanism. The ambipolar diffusion coefficients of the electron/silver ion pairs are found to switch from a low value to a high value when the silver concentration exceeds the percolation threshold obout 5 × 1021/cm3. The diffusion coefficients for concentrations below and above the percolation threshold are derived for the investigated compositions and illumination conditions. Further, the main differences between photoinduced diffusion and ion-beam-induced diffusion are discussed. © 1990.

引用

页码：186 / 193

页数：8

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