ION-BEAM INDUCED SILVER DOPING IN THE AG2SE/GESE2-RESIST SYSTEM

Ag//2Se/GeSe//2 films on silicon substrates were irradiated with 60 keV He** plus , Ne** plus , and Ar** plus ions. After exposure the remaining silver was removed from the GeSe//2 surface and Rutherford backscattering analysis was performed to obtain the depth distribution of silver in the film. The results indicate that the energy deposition at the Ag//2Se/GeSe//2 interface is responsible for the Ag dissolution and causes the Ag atoms to migrate further into the depth. A diffusion model describes the measured concentration profiles. Lithographic process parameters such as development rate are controlled by the Ag concentration in the GeSe//2 resist.