THE CHEMICAL-REACTIVITY AND LITHOGRAPHIC SENSITIVITY OF OBLIQUELY DEPOSITED GERMANIUM SELENIDE FILMS USED AS LOW-ENERGY ION-BEAM RESISTS

被引：15

作者：

VENKATESAN, T

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 04期

关键词：

D O I：

10.1116/1.571212

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1368 / 1373

页数：6

共 11 条

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