Molecular contamination mitigation in EUVL by environmental control

被引:37
作者
Koster, N
Mertens, B
Jansen, R
van de Runstraat, A
Stietz, F
Wedowski, M
Meiling, H
Klein, R
Gottwald, A
Scholze, F
Visser, M
Kurt, R
Zalm, P
Louis, E
Yakshin, A
机构
[1] TNO, TPD, NL-2600 AD Delft, Netherlands
[2] Carl Zeiss, Oberkochen, Germany
[3] ASML, Veldhoven, Netherlands
[4] PTB, Berlin, Germany
[5] Philips Res Labs, Eindhoven, Netherlands
[6] FOM, Inst Plasma Phys Rijnhuizen, Nieuwegein, Netherlands
关键词
EUVL; reflection loss; contamination; carbon growth; oxidation; MoSi mirrors; mirror lifetime;
D O I
10.1016/S0167-9317(02)00535-X
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
EUVL tools operate under vacuum conditions to avoid absorption losses. Under these conditions, the MoSi multilayer mirrors are contaminated, resulting in reduced reflection and thus throughput. We report on experiments on MoSi mirrors exposed to EUV radiation from a synchrotron. To mimic the effects of EUV radiation we also exposed samples using an electron gun. The oxidation rate was found to be similar to0.016 nm/h per mW/mm(2) of EUV radiation under conditions expected for a high throughput EUVL system. This oxidation can to a large extent be suppressed by using smart gas blend strategies during exposure, e.g. using ethanol. A carbon growth rate of 0.25 nm/h was found for a hydrocarbon pressure of 10(-9) mbar Fomblin. We demonstrate that carbonisation can be suppressed by admitting oxygen during electron gun exposure. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:65 / 76
页数:12
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