Heteroepitaxial growth of β-LiGaO2 thin films on ZnO

被引：31

作者：

Ohkubo, I

Hirose, C

Tamura, K

Nishii, J

Saito, H

Koinuma, H

Ahemt, P

Chikyow, T

Ishii, T

Miyazawa, S

Segawa, Y

Fukumura, T

Kawasaki, M ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Combinatorial Mat Explorat & Technol, Tsukuba, Ibaraki 3050044, Japan

[2] Tokyo Inst Technol, Mat & Struct Lab, Yokohama, Kanagawa 2268503, Japan

[3] Shinkosha Co Ltd, Yokohama, Kanagawa 2470007, Japan

[4] NTT Photon Labs, Atsugi, Kanagawa 2430198, Japan

[5] RIKEN, Inst Phys & Chem Res, Photodynam Res Ctr, Sendai, Miyagi 9800845, Japan

[6] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 92卷 / 09期

关键词：

D O I：

10.1063/1.1512311

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-quality interface between an insulator and ZnO as a wide-band-gap semiconductor should realize devices based on field-effect carrier modulation or superlattices having large band offset over 1 eV. We demonstrate that LiGaO2 could be a possible candidate for this purpose. Heteroepitaxy of LiGaO2 is demonstrated on ZnO films, giving atomically sharp interface and fairly good exciton-related optical properties in the ZnO under layer. Although slight distortion of a basal-plane hexagon with a lattice mismatch of about 3% in LiGaO2 gives multidomain epitaxial structure with relaxed lattices, a possible solution is proposed to realize coherent heterointerface. (C) 2002 American Institute of Physics.

引用

页码：5587 / 5589

页数：3

共 13 条

[1] Fabrication and optoelectronic properties of a transparent ZnO homostructural light-emitting diode [J].