Mobility gap profiles in Si:H intrinsic layers prepared by H2-dilution of SiH4:: effects on the performance of p-i-n solar cells

被引：5

作者：

Koval, RJ

Ferlauto, AS

Pearce, JM

Collins, RW ^{[1
]}

Wronski, CR

机构：

[1] Penn State Univ, Dept Phys, Ctr Thin Film Devices, University Pk, PA 16802 USA

[2] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2002年 / 299卷

关键词：

D O I：

10.1016/S0022-3093(01)01081-X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Insights into the growth processes and microstructural evolution for intrinsic (i) hydrogenated silicon (Si:H) films obtained from real-time spectroscopic ellipsometry (RTSE) are extended to the characterization of the optoelectronic properties of the corresponding solar cells. Numerical modeling of the J-V characteristics and their temperature dependences support the RTSE results and provide new information about the optoelectronic properties of the i-layer materials, Experimental results are presented that strongly suggest changes in the mobility gap of the i-layer materials as their microstructure evolves with thickness, further confirming the important effect of the hydrogen dilution ratio R (R drop [H-2]/[SiH4]) on the transitions from the amorphous to the microcrystalline phase in plasma-enhanced chemical vapor deposition (PECVD). (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：1136 / 1141

页数：6

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