Photoelectron spectroscopy studies of microcrystalline/amorphous silicon interfaces

被引：6

作者：

Böhmer, E ^{[1
]}

Lüth, H ^{[1
]}

机构：

[1] Inst Schicht & Ionentech, Forschungszentrum, D-52425 Julich, Germany

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2000年 / 266卷

关键词：

D O I：

10.1016/S0022-3093(99)00901-1

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Hydrogenated microcrystalline silicon (mu c-Si:H) films and microcrystalline/amorphous silicon heterojunctions have been studied using in situ X-ray photoelectron spectroscopy (XPS), ultra-violet photoelectron spectroscopy (UPS), total yield and constant final state (CFS) spectroscopy. We present XPS valence band spectroscopy as a new method of determining the near-surface (similar to 5 MI) crystallinity of microcrystalline films. The analysis of the CFS spectra allows the direct determination of the valence band discontinuity at the mu c-Si:H/a-Si:H interface. The experimental Delta E-v = 300 +/- 30 meV is in agreement with results obtained using indirect methods. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：1038 / 1043

页数：6

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