Ge/Si(100) heterostructures: A photoemission and low-energy yield spectroscopy investigation

被引：8

作者：

DiGaspare, L

Capellini, G

Sebastiani, M

Chudoba, C

Evangelisti, F

机构：

[1] UNIV ROMA 3,IST NAZL FIS MAT,I-00146 ROME,ITALY

[2] UNIV ROMA 3,DIPARTIMENTO FIS,I-00146 ROME,ITALY

来源：

APPLIED SURFACE SCIENCE | 1996年 / 102卷

关键词：

D O I：

10.1016/0169-4332(96)00027-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Heterostructures formed by epitaxial Ge grown in situ on Si(100) substrates were characterized by photoelectric yield spectroscopy, UPS and XPS. It is shown that both substrate and overlayer valence-band tops can be identified in the photoelectric-yield spectrum, thus allowing a direct and precise determination of the band lineup. We find a valence band discontinuity of 0.36 +/- 0.02 eV for heterojunctions whose overlayers were grown according to the Stranski-Krastanov mechanism, A considerably larger offset is obtained from the analysis of the XPS data.

引用

页码：94 / 97

页数：4

共 14 条

[1] EFFECT OF PHONON ENERGY-LOSS ON PHOTOEMISSIVE YIELD NEAR THRESHOLD [J].