CORE-LEVEL SHIFTS OF SILICON-HYDROGEN SPECIES ON CHEMICALLY TREATED SI SURFACES STUDIED BY HIGH-RESOLUTION X-RAY PHOTOELECTRON-SPECTROSCOPY

被引：17

作者：

BJORKMAN, CH ^{[1
]}

ALAY, JL ^{[1
]}

NISHIMURA, H ^{[1
]}

FUKUDA, M ^{[1
]}

YAMAZAKI, T ^{[1
]}

HIROSE, M ^{[1
]}

机构：

[1] HIROSHIMA UNIV,DEPT ELECT ENGN,HIGASHIHIROSHIMA 739,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 14期

关键词：

D O I：

10.1063/1.115074

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Chemical shifts of Si-H-x (x=1,2) species on Si surfaces obtained by ex situ chemical treatment have been evaluated by high-resolution x-ray photoelectron spectroscopy at a take-off angle of 5 degrees. Optimizing the water rinse and sample loading conditions enables identification of the Si-H-x components of the Si 2p core-level spectra, whose intensities display strong dependence on crystallographic orientation and surface treatment. NH4F-treated Si(111) exhibits almost exclusive monohydride termination which induces a chemical shift of 250 meV relative to the bulk component. On the other hand, 4.5% HF-treated Si(111) and 1% HF-treated Si(100) surfaces show increased dihydride termination with an associated shift of 480 meV. (C) 1995 American Institute of Physics.

引用

页码：2049 / 2051

页数：3

共 13 条

[1]

ALAY JC, UNPUB

[2] SI 2P CORE-LEVEL CHEMICAL-SHIFTS AT THE H/SI(111)-(1X1) SURFACE [J].

BLASE, X ;

DASILVA, AJR ;

ZHU, XJ ;

LOUIE, SG .

PHYSICAL REVIEW B, 1994, 50 (11) :8102-8105

[3]

CHABAL YJ, 1992, MATER RES SOC SYMP P, V259, P349, DOI 10.1557/PROC-259-349

[4] COMPARISON OF SI(111) SURFACES PREPARED USING AQUEOUS-SOLUTIONS OF NH4F VERSUS HF [J].

HIGASHI, GS ;

BECKER, RS ;

CHABAL, YJ ;

BECKER, AJ .

APPLIED PHYSICS LETTERS, 1991, 58 (15) :1656-1658

[5] IDEAL HYDROGEN TERMINATION OF THE SI-(111) SURFACE [J].

HIGASHI, GS ;

CHABAL, YJ ;

TRUCKS, GW ;

RAGHAVACHARI, K .

APPLIED PHYSICS LETTERS, 1990, 56 (07) :656-658

[6] MICROSCOPIC STRUCTURE OF THE SIO2/SI INTERFACE [J].

HIMPSEL, FJ ;

MCFEELY, FR ;

TALEBIBRAHIMI, A ;

YARMOFF, JA ;

HOLLINGER, G .

PHYSICAL REVIEW B, 1988, 38 (09) :6084-6096

[7] ELECTRON-TUNNELING THROUGH ULTRATHIN GATE OXIDE FORMED ON HYDROGEN-TERMINATED SI(100) SURFACES [J].

HIROSHIMA, M ;

YASAKA, T ;

MIYAZAKI, S ;

HIROSE, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1B) :395-398

[8] ELECTRONIC-STRUCTURE AND ITS DEPENDENCE ON LOCAL ORDER FOR H/SI(111)-(1X1) SURFACES [J].

HRICOVINI, K ;

GUNTHER, R ;

THIRY, P ;

TALEBIBRAHIMI, A ;

INDLEKOFER, G ;

BONNET, JE ;

DUMAS, P ;

PETROFF, Y ;

BLASE, X ;

ZHU, XJ ;

LOUIE, SG ;

CHABAL, YJ ;

THIRY, PA .

PHYSICAL REVIEW LETTERS, 1993, 70 (13) :1992-1995

[9] SI 2P CORE-LEVEL SPECTROSCOPY OF THE SI(111)-(1 X 1)-H AND SI(111)-(1 X 1)-D SURFACES - VIBRATIONAL EFFECTS AND PHONON BROADENING [J].

KARLSSON, CJ ;

OWMAN, F ;

LANDEMARK, E ;

CHAO, YC ;

MARTENSSON, P ;

UHRBERG, RIG .

PHYSICAL REVIEW LETTERS, 1994, 72 (26) :4145-4148

[10] FILM THICKNESS MEASUREMENTS OF SIO2 BY XPS [J].

MITCHELL, DF ;

CLARK, KB ;

BARDWELL, JA ;

LENNARD, WN ;

MASSOUMI, GR ;

MITCHELL, IV .

SURFACE AND INTERFACE ANALYSIS, 1994, 21 (01) :44-50

← 1 2 →