BAND DISCONTINUITIES AT HETEROJUNCTIONS BETWEEN CRYSTALLINE AND AMORPHOUS-SILICON

被引：33

作者：

VAN DE WALLE, CG ^{[1
]}

YANG, LH ^{[1
]}

机构：

[1] LAWRENCE LIVERMORE NATL LAB, LIVERMORE, CA 94551 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 04期

关键词：

D O I：

10.1116/1.587870

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a theoretical investigation of the band lineups between crystalline and amorphous silicon, based on the first-principles pseudopotential method and the model-solid theory. We find that the offsets are very sensitive to the hydrogen content of the material; the valence-band offset for a junction with unhydrogenated a-Si is -0.25 eV, while for hydrogenated a-Si with a hydrogen content of 11% the offset becomes 0.20 eV. Consequences for the interpretation of experimental data are discussed. (C) 1995 American Vacuum Society.

引用

页码：1635 / 1638

页数：4

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