Effects of unique ion chemistry on thin-film growth by plasma-surface interactions

被引:51
作者
Wijesundara, MBJ
Hanley, L
Ni, B
Sinnott, SB
机构
[1] Univ Illinois, Dept Chem, Chicago, IL 60680 USA
[2] Univ Kentucky, Dept Chem & Mat Engn, Lexington, KY 40506 USA
关键词
D O I
10.1073/pnas.97.1.23
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Plasma processing is a standard industrial method for the modification of material surfaces and the deposition of thin films. Polyatomic ions and neutrals larger than a triatomic play a critical role in plasma-induced surface chemistry, especially in the deposition of polymeric films from fluorocarbon plasmas. In this paper, low energy CF3+ and C3F5+ ions are used to modify a polystyrene surface. Experimental and computational studies are combined to quantify the effect of the unique chemistry and structure of the incident ions on the result of ion-polymer collisions. C3F5+ ions are more effective at growing films than CF3+, both at similar energy/atom of approximate to 6 eV/atom and similar total kinetic energies of 25 and 50 eV. The composition of the films grown experimentally also varies with both the structure and kinetic energy of the incident ion. Both C3F5+ and CF3+ should be thought of as covalently bound polyatomic precursors or fragments that can react and become incorporated within the polystyrene surface, rather than merely donating F atoms, The size and structure of the ions affect polymer film formation via differing chemical structure, reactivity, sticking probabilities, and energy transfer to the surface. The different reactivity of these two ions with the polymer surface supports the argument that larger species contribute to the deposition of polymeric films from fluorocarbon plasmas, These results indicate that complete understanding and accurate computer modeling of plasma-surface modification requires accurate measurement of the identities, number densities, and kinetic energies of higher mass ions and energetic neutrals.
引用
收藏
页码:23 / 27
页数:5
相关论文
共 60 条
[21]  
Gengenbach TR, 1998, SURF INTERFACE ANAL, V26, P498, DOI 10.1002/(SICI)1096-9918(199806)26:7<498::AID-SIA393>3.0.CO
[22]  
2-3
[23]  
Gerenser LJ, 1994, PLASMA SURFACE MODIF, P43
[24]   THE FORMATION OF VACANCY-TYPE DEFECT CLUSTERS BY ION-BOMBARDMENT - A PROBLEM REVISITED BY MOLECULAR-DYNAMICS [J].
GHALY, M ;
AVERBACK, RS .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1994, 55 (10) :945-953
[25]  
GRAVES DB, 1996, DATABASE NEEDS MODEL
[26]   QUANTIFICATION OF SURFACE-FILM FORMATION EFFECTS IN FLUOROCARBON PLASMA-ETCHING OF POLYSILICON [J].
GRAY, DC ;
SAWIN, HH ;
BUTTERBAUGH, JW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (03) :779-785
[27]   REDEPOSITION KINETICS IN FLUOROCARBON PLASMA-ETCHING [J].
GRAY, DC ;
MOHINDRA, V ;
SAWIN, HH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (02) :354-364
[28]   Energetics, timescales, and chemistry of low energy molecular ion-organic surface collisions [J].
Hanley, L ;
Lim, H ;
Schultz, DG ;
Garbis, S ;
Yu, CW ;
Ada, ET ;
Wijesundara, MBJ .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 157 (1-4) :174-182
[29]   Molecular dynamics simulations of fluorosilyl species impacting fluorinated silicon surfaces with energies from 0.1 to 100 eV [J].
Helmer, BA ;
Graves, DB .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1997, 15 (04) :2252-2261
[30]   Implantation and damage under low-energy Si self-bombardment [J].
Hensel, H ;
Urbassek, HM .
PHYSICAL REVIEW B, 1998, 57 (08) :4756-4763