Implantation and damage under low-energy Si self-bombardment

被引：62

作者：

Hensel, H ^{[1
]}

Urbassek, HM ^{[1
]}

机构：

[1] Univ Kaiserslautern, Fachbereich Phys, D-67663 Kaiserslautern, Germany

来源：

PHYSICAL REVIEW B | 1998年 / 57卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.57.4756

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using molecular-dynamics simulations, we study the implantation of 50- and 100-eV Si atoms into (100) 2x1, (110), and (111) Si monocrystals and the induced damage. The dependence of the ion range and the damage distribution on the target crystal surface is discussed. The size of the near-surface disordered zones created by the ion impact is studied, and compared to experimental data for the critical fluence of Si amorphization. The fate of such a disordered zone-under thermal annealing is studied for a representative case. Target atom relocation and adatom formation are investigated. [S0163-1829(98)04408-7].

引用

页码：4756 / 4763

页数：8

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