Transport in gated undoped GaAs/AlxGa1-xAs heterostructures in the high density and high mobility range

被引：15

作者：

Herfort, J ^{[1
]}

Hirayama, Y ^{[1
]}

机构：

[1] PAUL DRUDE INST FESTKORPERELEKT, D-10117 BERLIN, GERMANY

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 22期

关键词：

D O I：

10.1063/1.117306

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The two-dimensional electron gas with electron densities higher than 10(16) m(-2) which is formed at the interface in undoped GaAs/AlxGal-xAs heterostructure by the electric field generated by a top gate is studied. Despite the high electron density in the sample, rather high mobilities of about 100 m(2)/Vs can be achieved with sufficient small gate leakage currents. The population of the second subband is studied from Shubnikov-de Haas measurements in these devices. (C) 1996 American Institute of Physics.

引用

页码：3360 / 3362

页数：3

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