INFLUENCE OF X-VALLEY SUPERLATTICE ON ELECTRON BLOCKING BY MULTIQUANTUM BARRIERS

被引：11

作者：

YEN, ST ^{[1
]}

LEE, CP ^{[1
]}

TSAI, CM ^{[1
]}

CHEN, HR ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU,TAIWAN

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 21期

关键词：

D O I：

10.1063/1.112546

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Four n-i-n GaAs/AlGaAs diodes have been used to demonstrate that at room temperature the carrier blocking is influenced by the X-valley superlattice in a multiquantum barrier. The diode with a Γ-X crossover multiquantum barrier has a current at least three orders lower than the corresponding diode with only a bulk barrier. However, diodes without Γ-X crossover barriers have resistance as low as 10 Ω in spite of whether a multiquantum barrier exists or not. This indicates that the X-valley superlattice plays an important role in blocking the current flowing across/through a multiquantum barrier. © 1994 American Institute of Physics.

引用

页码：2720 / 2722

页数：3

共 11 条

[1]

CASEY HC, 1978, HETEROSTRUCTURE LA A, pCH4

[2] ALGAINP STRAINED MULTIPLE-QUANTUM-WELL VISIBLE LASER-DIODES (LAMBDA(L)LESS-THAN-OR-EQUAL-TO-630-NM-BAND) WITH A MULTIQUANTUM BARRIER GROWN ON MISORIENTED SUBSTRATES [J].