Fabrication and characterization of InGaN p-i-n homojunction solar cell

被引：105

作者：

Cai, Xiao-mei ^{[1
]}

Zeng, Sheng-wei ^{[1
]}

Zhang, Bao-ping ^{[1
,2
]}

机构：

[1] Xiamen Univ, Dept Phys, Lab Micronano Optoelect, Xiamen 361005, Fujian, Peoples R China

[2] Xiamen Univ, Pen Tung Sah Micronano Technol Res Ctr, Xiamen 361005, Fujian, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 17期

关键词：

ABSORPTION; GROWTH; ENERGY; GAP; INN;

D O I：

10.1063/1.3254215

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InxGa1-xN p-i-n homojunction solar cells with different In content are studied. The measured open circuit voltages (V-oc) are 2.24, 1.34, and 0.96 V, for x=0.02, 0.12, and 0.15, respectively. By comparing the x-ray rocking curves, the I-V characteristics and the external quantum efficiencies, it's demonstrated that the deterioration of InGaN crystal quality for larger In contents causes the decrease of V-oc. The result demonstrates that reduction of defect is a key factor in the fabrication of nitride solar cell. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3254215]

引用

页数：3

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