Effect of carrier trapping on the hysteretic current-voltage characteristics in Ag/La0.7Ca0.3MnO3/Pt heterostructures

被引：353

作者：

Shang, D. S.

Wang, Q.

Chen, L. D. ^{[1
]}

Dong, R.

Li, X. M.

Zhang, W. Q.

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China

来源：

PHYSICAL REVIEW B | 2006年 / 73卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.73.245427

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The current-voltage (I-V) characteristics and resistance switching mechanism of Ag/La0.7Ca0.3MnO3(LCMO)/Pt sandwiched films, which were deposited on Pt/Ti/SiO2/Si substrates by pulse laser deposition, were investigated. The I-V characteristics can be explained by hole carrier injected space charge limited (SCL) conduction controlled by Ag/LCMO interface traps exponentially distributed in energy. The hysteresis and asymmetry in the I-V curves are due to trapping/detrapping process of hole carriers. The resistance changes under different voltage range are related to the carrier trapping levels induced by the positive voltage bias. Retention property of resistance is attributed to ordering/disordering transition, which is discussed on the basis of trap-assisted interface phase separation scenario. Therefore, the resistance switching induced by voltage pulses is attributed to the interface induced bulklike limited transport effect.

引用

页数：7

共 43 条

[1] Electric-pulse-induced reflectance change in the thin film of perovskite manganite [J].

Aoyama, K ;

Waku, K ;

Asanuma, A ;

Uesu, Y ;

Katsufuji, T .

APPLIED PHYSICS LETTERS, 2004, 85 (07) :1208-1210

[2] Current switching of resistive states in magnetoresistive manganites [J].

Asamitsu, A ;

Tomioka, Y ;

Kuwahara, H ;

Tokura, Y .

NATURE, 1997, 388 (6637) :50-52

[3] Field-driven hysteretic and reversible resistive switch at the Ag-Pr0.7Ca0.3MnO3 interface [J].

Baikalov, A ;

Wang, YQ ;

Shen, B ;

Lorenz, B ;

Tsui, S ;

Sun, YY ;

Xue, YY ;

Chu, CW .

APPLIED PHYSICS LETTERS, 2003, 83 (05) :957-959

[4] Reproducible switching effect in thin oxide films for memory applications [J].

Beck, A ;

Bednorz, JG ;

Gerber, C ;

Rossel, C ;

Widmer, D .

APPLIED PHYSICS LETTERS, 2000, 77 (01) :139-141

[5] ELECTRON LOCALIZATION IN MIXED-VALENCE MANGANITES [J].

COEY, JMD ;

VIRET, M ;

RANNO, L ;

OUNADJELA, K .

PHYSICAL REVIEW LETTERS, 1995, 75 (21) :3910-3913

[6] Colossal magnetoresistant materials: The key role of phase separation [J].

Dagotto, E ;

Hotta, T ;

Moreo, A .

PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 2001, 344 (1-3) :1-153

[7] Influence of surface traps on space-charge limited current [J].

de Boer, RWI ;

Morpurgo, AF .

PHYSICAL REVIEW B, 2005, 72 (07)

[8] Retention behavior of the electric-pulse-induced reversible resistance change effect in Ag-La0.7Ca0.3MnO3-Pt sandwiches -: art. no. 172107 [J].

Dong, R ;

Wang, Q ;

Chen, LD ;

Shang, DS ;

Chen, TL ;

Li, XM ;

Zhang, WQ .

APPLIED PHYSICS LETTERS, 2005, 86 (17) :1-3

[9] Fatigue behavior of the electric pulse induced reversible resistance change effect in AgLa0.7Ca0.3MnO3Pt sandwich [J].

Dong, R ;

Wang, Q ;

Chen, L ;

Chen, T ;

Li, X .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 80 (01) :13-16

[10] Spatially inhomogeneous metal-insulator transition in doped manganites [J].

Fäth, M ;

Freisem, S ;

Menovsky, AA ;

Tomioka, Y ;

Aarts, J ;

Mydosh, JA .

SCIENCE, 1999, 285 (5433) :1540-1542

← 1 2 3 4 5 →