Chemical process of silicon epitaxial growth in a SiHCl3-H2 system

被引:52
作者
Habuka, H
Aoyama, Y
Akiyama, S
Otsuka, T
Qu, WF
Shimada, M
Okuyama, K
机构
[1] Shin Etsu Handotai Co Ltd, Isobe R&D Ctr, Gunma 3790196, Japan
[2] Hiroshima Univ, Fac Engn, Dept Chem Engn, Higashihiroshima 7398527, Japan
关键词
silicon; epitaxial growth; chemical process; trichlorosilane;
D O I
10.1016/S0022-0248(99)00360-7
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The chemical process of silicon epitaxial growth in a SiHCl3-H-2 system at atmospheric pressure is studied experimentally using a horizontal cold-wall single-wafer reactor and a quadrupole mass spectra analyzer. The dominant chlorosilane species in the gas phase and the dominant overall chemical reaction are experimentally determined to be SiHCl3 gas and SiHCl3 + H-2 --> Si + 3HCl, respectively. Since the amount of HCl gas produced in the reactor is proportional to the silicon epitaxial growth rate, it is concluded that the dominant chemical process of silicon epitaxial growth in a SiHCl3-H-2 system occurs on the silicon substrate surface. The concentrations of SiCl2, SiH2Cl2, SiHCl and SiCl4 gases produced in the gas phase are too low to play a significant role in silicon epitaxial growth. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:77 / 86
页数:10
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