Low-temperature growth of epitaxial ZnO films on (001) sapphire by ultraviolet-assisted pulsed laser deposition

被引：40

作者：

Craciun, V ^{[1
]}

Perriere, J

Bassim, N

Singh, RK

Craciun, D

Spear, J

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[2] Univ Paris 07, Phys Solides Grp, Paris, France

[3] Univ Paris 06, Paris, France

[4] Nast Inst Laser Plasma & Radiat Phys, Laser Dept, Bucharest, Romania

[5] Philips Analyt, Tempe, AZ 85226 USA

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1999年 / 69卷 / Suppl 1期

关键词：

D O I：

10.1007/s003390051463

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZnO thin films have been grown on thin Si3N4 membranes and (001) sapphire substrates by an ultraviolet-assisted pulsed laser deposition (UVPLD) technique. The microstructure of the films grown on Si3N4 membranes, investigated by transmission electron microscopy, showed that crystalline and textured films can be grown by UVPLD at a substrate temperature of only 100 degrees C. For deposition temperatures higher than 400 degrees C, ZnO films grown on sapphire substrates were found to be epitaxial by Ruther-ford backscattering (RBS) and X-ray diffraction measurements. The minimum yield of channeling RES spectra recorded from films deposited at 550 degrees C was around 2% and the FWHM of the rocking curve for the (002) diffraction peak was 0.17 degrees; these values are similar to those recorded from ZnO layers grown by conventional PLD at 750 degrees C.

引用

页码：S531 / S533

页数：3

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