GROWTH OF ZNO THIN-FILMS ON GAAS BY PULSED-LASER DEPOSITION

被引:75
作者
CRACIUN, V [1 ]
ELDERS, J [1 ]
GARDENIERS, JGE [1 ]
GERETOVSKY, J [1 ]
BOYD, IW [1 ]
机构
[1] UNIV TWENTE,MESA RES INST,7500 AE ENSCHEDE,NETHERLANDS
关键词
LASER ABLATION; ZINC OXIDE; X-RAY DIFFRACTION; DEPOSITION PROCESS; STRUCTURAL PROPERTIES;
D O I
10.1016/0040-6090(94)09479-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
ZnO thin films have been grown on GaAs substrates using the pulsed laser deposition technique with or without a photodeposited SiO2 buffer layer. The presence of the SiO2 layer has a beneficial effect on the crystalline quality of the grown ZnO films. Highly c-axis oriented ZnO films having a full width at half maximum value of the (002) X-ray diffraction line of less than 0.13 degrees have been grown on such buffer layers at a substrate temperature of only 350 degrees C.
引用
收藏
页码:1 / 4
页数:4
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