DEVELOPMENT OF A NOVEL LARGE AREA EXCIMER LAMP FOR DIRECT PHOTO DEPOSITION OF THIN-FILMS

被引：29

作者：

BERGONZO, P ^{[1
]}

PATEL, P ^{[1
]}

BOYD, IW ^{[1
]}

KOGELSCHATZ, U ^{[1
]}

机构：

[1] ASEA BROWN BOVERI CORP RES,CH-5405 BADEN,SWITZERLAND

来源：

APPLIED SURFACE SCIENCE | 1992年 / 54卷

关键词：

D O I：

10.1016/0169-4332(92)90081-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The desire for low-temperature processing in order to minimize undesirable effects has brought about an extensive use of photochemical vapour deposition (photo-CVD). Photo-enhanced processing is one of the techniques which has received considerable interest. One of the major limitations of photo-processing is the lack of sufficiently intense ultra-violet (UV) sources. In this paper we report the design of a new and intense large area UV lamp based on the dielectric barrier discharge. We shall also discuss the direct (i.e. without intermediate photo-sensitisation reactions) photo-induced deposition of thin silicon dioxide films using SiH4 and N2O which are photo-dissociated by 126 nm photons generated by this variable wavelength excimer lamp.

引用

页码：424 / 429

页数：6

共 18 条

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