Next generation of oxide photonic devices: ZnO-based ultraviolet light emitting diodes

被引：364

作者：

Ryu, YR

Lee, TS

Lubguban, JA

White, HW

Kim, BJ

Park, YS

Youn, CJ

机构：

[1] MOXtron Inc, Columbia, MO 65203 USA

[2] Univ Missouri, Dept Phys & Astron, Columbia, MO 65211 USA

[3] NINEX Co Ltd, Kyongki 459040, South Korea

[4] Seoul Natl Univ, Sch Phys, Seoul 151747, South Korea

[5] Jeonbuk Natl Univ, SPRC, Jeonju 561756, South Korea

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 24期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1063/1.2210452

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Results are presented for ZnO-based ultraviolet light emitting diodes (LEDs) that employ a BeZnO/ZnO active layer comprised of seven quantum wells. Arsenic and gallium are used for p-type and n-type layers. The ZnO-based LEDs show two dominant electroluminescence peaks located in the ultraviolet spectral region between 360 and 390 nm, as well as a broad peak at 550 nm.

引用

页数：3

共 6 条

[1]

[Anonymous], 1997, BLUE LASER DIODE GAN, DOI DOI 10.1007/978-3-662-03462-0

[2] Wide-band gap oxide alloy: BeZnO [J].