Buried tunnel contact junction AlGaAs-GaAs-InGaAs quantum well heterostructure lasers with oxide-defined lateral currents

被引：32

作者：

Wierer, JJ ^{[1
]}

Evans, PW ^{[1
]}

Holonyak, N ^{[1
]}

机构：

[1] UNIV ILLINOIS,CTR COMPOUND SEMICOND MICROELECT,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 16期

关键词：

D O I：

10.1063/1.120071

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlxGa1-xAs-GaAs-InyGa1-yAs quantum well heterostructure (QWH) lasers with p(+)-n(+) GaAs-InyGa1-yAs reverse-biased tunnel junctions (hole sources) located in the upper cladding of standard lasers and in oxide-defined cavities (requiring lateral bias currents) are demonstrated. The tunnel junctions, introduced to aid lateral current spreading, are grown at different distances front the waveguide active region in a standard QWH structure to determine first the effect of heavily doped tunnel layers on laser threshold currents. Other QWH laser crystals are oxidized to form oxide-aperture devices with, in addition, either-a top confining oxide or a top and bottom oxide confirming layer, Hole injection is provided between the oxide layers with the aid of the tunnel contact junction and lateral electron current. The buried tunnel contact junction is shown to be an effective method to make possible hole injection via a lateral electron current, with only a modest increase (a small penalty) in voltage drop and series resistance compared to standard devices. (C) 1997 American Institute of Physics.

引用

页码：2286 / 2288

页数：3

共 10 条

[1] HYDROLYZATION OXIDATION OF ALXGA1-XAS-ALAS-GAAS QUANTUM-WELL HETEROSTRUCTURES AND SUPERLATTICES [J].

DALLESASSE, JM ;

HOLONYAK, N ;

SUGG, AR ;

RICHARD, TA ;

ELZEIN, N .

APPLIED PHYSICS LETTERS, 1990, 57 (26) :2844-2846

[2]

DUPUIS RD, 1979, P INT S GAAS RELATED, P1

[3] EDGE-EMITTING QUANTUM-WELL HETEROSTRUCTURE LASER-DIODES WITH AUXILIARY NATIVE-OXIDE VERTICAL-CAVITY CONFINEMENT [J].

EVANS, PW ;

HOLONYAK, N ;

MARANOWSKI, SA ;

RIES, MJ ;

CHEN, EI .

APPLIED PHYSICS LETTERS, 1995, 67 (21) :3168-3170

[4] GALLIUM ARSENIDE TUNNEL DIODES [J].

HOLONYAK, N ;

LESK, IA .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1960, 48 (08) :1405-1409

[5] NATIVE-OXIDE DEFINED RING CONTACT FOR LOW-THRESHOLD VERTICAL-CAVITY LASERS [J].

HUFFAKER, DL ;

DEPPE, DG ;

KUMAR, K ;

ROGERS, TJ .

APPLIED PHYSICS LETTERS, 1994, 65 (01) :97-99

[6] METALORGANIC CHEMICAL VAPOR-DEPOSITION OF III-V SEMICONDUCTORS [J].

LUDOWISE, MJ .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (08) :R31-R55

[7] NATIVE-OXIDE TOP-CONFINED AND BOTTOM-CONFINED NARROW STRIPE P-N ALYGA1-YAS-GAAS-INXGA1-XAS QUANTUM-WELL HETEROSTRUCTURE LASER [J].

MARANOWSKI, SA ;

SUGG, AR ;

CHEN, EI ;

HOLONYAK, N .

APPLIED PHYSICS LETTERS, 1993, 63 (12) :1660-1662

[8] HIGH-CURRENT DENSITY CARBON-DOPED STRAINED-LAYER GAAS (P+)-INGAAS(N+)-GAAS(N+) P-N TUNNEL-DIODES [J].

RICHARD, TA ;

CHEN, EI ;

SUGG, AR ;

HOFLER, GE ;

HOLONYAK, N .

APPLIED PHYSICS LETTERS, 1993, 63 (26) :3613-3615

[9] NATIVE OXIDE-EMBEDDED ALYGA1-YAS-GAAS-INXGA1-XAS QUANTUM-WELL HETEROSTRUCTURE LASERS [J].

SUGG, AR ;

CHEN, EI ;

RICHARD, TA ;

HOLONYAK, N ;

HSIEH, KC .

APPLIED PHYSICS LETTERS, 1993, 62 (11) :1259-1261

[10] N-P-(P+-N+)-N ALYGA1-YAS-GAAS-INXGA1-XAS QUANTUM-WELL LASER WITH P+-N+ GAAS-INGAAS TUNNEL CONTACT ON N-GAAS [J].

SUGG, AR ;

CHEN, EI ;

RICHARD, TA ;

MARANOWSKI, SA ;

HOLONYAK, N .

APPLIED PHYSICS LETTERS, 1993, 62 (20) :2510-2512

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