EDGE-EMITTING QUANTUM-WELL HETEROSTRUCTURE LASER-DIODES WITH AUXILIARY NATIVE-OXIDE VERTICAL-CAVITY CONFINEMENT

被引：11

作者：

EVANS, PW ^{[1
]}

HOLONYAK, N ^{[1
]}

MARANOWSKI, SA ^{[1
]}

RIES, MJ ^{[1
]}

CHEN, EI ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 21期

关键词：

D O I：

10.1063/1.115151

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Data are presented demonstrating edge-emitting laser diode operation of AlyGa1-yAs-GaAs-InxGa1-xAs quantum well heterostructures modified by the formation of a buried native-oxide distributed Bragg reflecting(DBR) mirror adding vertical confinement to the longitudinal laser cavity. The bottom DBR mirror, combined with the highly reflective top p-contact metallization (Ag), forms a thin broadband vertical cavity. The auxiliary vertical mirrors are tuned to improve the coupling of the spontaneous emission to the longitudinal lasing mode, resulting in reduced threshold currents and modified emission characteristics below threshold. (C) 1995 American Institute of Physics.

引用

页码：3168 / 3170

页数：3

共 12 条

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