Influence of surfactant coverage on epitaxial growth of Ge on Si(001)

被引：64

作者：

Katayama, M ^{[1
]}

Nakayama, T ^{[1
]}

Aono, M ^{[1
]}

McConville, CF ^{[1
]}

机构：

[1] UNIV WARWICK, DEPT PHYS, COVENTRY CV4 7AL, W MIDLANDS, ENGLAND

来源：

PHYSICAL REVIEW B | 1996年 / 54卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.54.8600

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The growth of Ge on Si(001) at elevated temperatures has been monitored in real time using coaxial impact collision ion scattering spectroscopy in the presence of various constant coverages of surfactant, Bi or Sb, with thermal evaporation of the surfactant being compensated automatically. As the coverage of surfactant increases, the intermixing of Ge and Si is suppressed, the crystalline quality of the resulting Ge film is improved, and the nucleation and growth of macroscopic Ge islands is suppressed.

引用

页码：8600 / 8604

页数：5

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