Properties of indium tin oxide films deposited on unheated polymer substrates by ion beam assisted deposition

被引：25

作者：

Yu Zhinong ^{[1
]}

Li Yuqiong ^{[1
]}

Xia Fan ^{[1
]}

Zhao Zhiwei ^{[1
]}

Xue Wei ^{[1
]}

机构：

[1] Beijing Inst Technol, Dept Opt Engn, Sch Informat Engn, Beijing 100081, Peoples R China

来源：

THIN SOLID FILMS | 2009年 / 517卷 / 18期

关键词：

Ion beam assisted deposition; Indium tin oxide; Buffer layer; Bending behavior; Electrical properties and measurements; Plastic substrate; Optical properties; OPTICAL-PROPERTIES; GROWTH;

D O I：

10.1016/j.tsf.2008.12.057

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The optical, electrical and mechanical properties of indium tin oxide (ITO) films prepared on polyethylene terephthalate (PET) substrates by ion beam assisted deposition at room temperature were investigated. The properties of ITO films can be improved by introducing a buffer layer of silicon dioxide (SiO2) between the ITO film and the PET substrate. ITO films deposited on SiO2-coated PET have better crystallinity, lower electrical resistivity, and improved resistance stability under bending than those deposited on bare PET. The average transmittance and the resistivity of ITO films deposited on SiO2-coated PET are 85% and 0.90 x 10(-3) Omega cm, respectively, and when the films are bent, the resistance remains almost constant until a bending radius of 1 cm and it increases slowly under a given bending radius with an increase of the bending cycles. The improved resistance stability of ITO films deposited on SiO2-coated PET is mainly attributed to the perfect adhesion of ITO films induced by the SiO2 buffer layer. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：5395 / 5398

页数：4

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