Improvements in Stability and Performance of N,N′-Dialkyl Perylene Diimide-Based n-Type Thin-Film Transistors

被引：87

作者：

Wen, Yugeng ^{[1
,2
]}

Liu, Yunqi ^{[1
]}

Di, Chong-an ^{[1
]}

Wang, Ying ^{[1
]}

Sun, Xiangnan ^{[1
,2
]}

Guo, Yunlong ^{[1
,2
]}

Zheng, Jian ^{[1
,2
]}

Wu, Weiping ^{[1
,2
]}

Ye, Shanghui ^{[1
,2
]}

Yu, Gui ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Chem, Key Lab Organ Solids, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China

来源：

ADVANCED MATERIALS | 2009年 / 21卷 / 16期

基金：

中国国家自然科学基金;

关键词：

SELF-ASSEMBLED MONOLAYERS; FIELD-EFFECT TRANSISTORS; HIGH-ELECTRON-MOBILITY; COMPLEMENTARY CIRCUITS; ORGANIC SEMICONDUCTORS; CHARGE-TRANSPORT; GOLD; TEMPERATURE; OLIGOMERS; CONTACTS;

D O I：

10.1002/adma.200802934

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The stability and performance of N,N'-dioctyl perylene diimide (PDI-C8) and N,N'-ditridecyl perylene diimide (PDI-C13) thin-film transistors (TFTs) are increased using optimized growth rates and sulfur-modified top-contact electrodes. Changing the grain size and the depth of grain boundaries by controlling film growth rate is another way of increasing the air stability of perylene diimides without electron-withdrawing groups. [GRAPHICS]

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页码：1631 / +

页数：6

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