Intersubband transitions in InGaNAs/GaAs quantum wells

被引：40

作者：

Duboz, JY ^{[1
]}

Gupta, JA

Byloss, M

Aers, GC

Liu, HC

Wasilewski, ZR

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

[2] Thales Res & Technol, F-91404 Orsay, France

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 10期

关键词：

D O I：

10.1063/1.1500434

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Intersubband transitions are observed in InGaNAs/GaAs quantum wells at wavelengths around 10 mum. The transition energies are correlated with interband transition energies measured in the near infrared. Clear selection rules are observed: the transition is TM polarized. The amplitude of the absorption is consistent with an increase of the electron effective mass as the N content increases. (C) 2002 American Institute of Physics.

引用

页码：1836 / 1838

页数：3

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