Localized charge trapping due to adsorption in nanotube field-effect transistor and its field-mediated transport

被引：48

作者：

Lin, H. ^{[1
]}

Tiwari, S.

机构：

[1] Cornell Univ, Dept Appl & Engn Phys, Ithaca, NY 14853 USA

[2] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 07期

基金：

美国国家科学基金会;

关键词：

ELECTRONIC-PROPERTIES; OXYGEN-ADSORPTION; CARBON; GRAPHITE;

D O I：

10.1063/1.2337104

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ambient adsorption is known to cause hysteretic behavior and irreproducible transport phenomena in carbon nanotubes and their corresponding field-effect transistors. The authors report that pulsed measurements, with a time constant below 500 mu s, provide reproducible characteristics of carbon nanotube field-effect transistor with minimal hysteresis. Transient measurements of fabricated devices in air reveal multiple time constants whose origins are linked to adsorption processes and the local electric field environment of the carbon nanotube surface. Additional measurements in vacuum allow them to further elaborate on distinct effects on device transport characteristics due to adsorption. (c) 2006 American Institute of Physics.

引用

页数：3

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