High performance electrolyte gated carbon nanotube transistors

被引：486

作者：

Rosenblatt, S

Yaish, Y

Park, J

Gore, J

Sazonova, V

McEuen, PL ^{[1
]}

机构：

[1] Cornell Univ, Atom & Solid State Phys Lab, Ithaca, NY 14853 USA

[2] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

来源：

NANO LETTERS | 2002年 / 2卷 / 08期

关键词：

D O I：

10.1021/nl025639a

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We have fabricated high performance field-effect transistors made from semiconducting single-walled carbon nanotubes (SWNTs). Using chemical vapor deposition to grow the tubes, annealing to improve the contacts, and an electrolyte as a gate, we obtain very high device mobilities and transconductances. These measurements demonstrate that SWNTs are attractive for both electronic applications and for chemical and biological sensing.

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收藏

页码：869 / 872

页数：4

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