High performance electrolyte gated carbon nanotube transistors

被引:486
作者
Rosenblatt, S
Yaish, Y
Park, J
Gore, J
Sazonova, V
McEuen, PL [1 ]
机构
[1] Cornell Univ, Atom & Solid State Phys Lab, Ithaca, NY 14853 USA
[2] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
关键词
D O I
10.1021/nl025639a
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We have fabricated high performance field-effect transistors made from semiconducting single-walled carbon nanotubes (SWNTs). Using chemical vapor deposition to grow the tubes, annealing to improve the contacts, and an electrolyte as a gate, we obtain very high device mobilities and transconductances. These measurements demonstrate that SWNTs are attractive for both electronic applications and for chemical and biological sensing.
引用
收藏
页码:869 / 872
页数:4
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