Physical and reliability characteristics of metal-oxide-semiconductor devices with HfOxNy gate dielectrics on different surface-oriented substrates

被引：4

作者：

Cheng, CL ^{[1
]}

Chang-Liao, KS ^{[1
]}

Wang, PL ^{[1
]}

Wang, TK ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2004年 / 43卷 / 5A期

关键词：

physical characteristics; reliability; metal-oxide-semiconductor; hafnium oxynitride; surface-oriented substrate;

D O I：

10.1143/JJAP.43.L599

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The physical and reliability characteristics of a metal-oxide-semiconductor (MOS) device with gate hafnium oxynitride (HfOxNy) deposited on (100)- and (111)-surface-oriented substrates were investigated. The X-ray photoelectron spectroscopy (XPS) results show that the oxygen 1 s peak for the (111) substrate samples is lower than that for the (100) samples while the nitrogen is peak is higher for the former. Crystalline retardation for the HfOxNy film deposited onto the (111) substrate was characterized by X-ray diffraction (XRD) measurement. Devices with a HfOxNy film deposited on a (111) substrate exhibit better reliability characteristics, such as smaller stress-induced leakage current (SILC) and larger time to breakdown (T-bd) than those with the same film deposited, on a (100) substrate.

引用

页码：L599 / L601

页数：3

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