Magnetoresistance of a two-dimensional electron gas in a parallel magnetic field

被引:163
作者
Dolgopolov, VT [1 ]
Gold, A
机构
[1] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow Oblast, Russia
[2] CNRS, Ctr Elaborat Mat & Etud Struct, F-31055 Toulouse, France
基金
俄罗斯基础研究基金会;
关键词
D O I
10.1134/1.568270
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The conductivity of a two-dimensional electron gas in a parallel magnetic field is calculated. We take into account the magnetic-field-induced spin-splitting, which changes the density of states, the Fermi momentum, and the screening behavior of the electron gas. For impurity scattering, we predict a positive magnetoresistance for low electron density and a negative magnetoresistance for high electron density. The theory is in qualitative agreement with recent experimental results found for Si inversion layers and Si quantum wells. (C) 2000 MAIK "Nauka/Interperiodica".
引用
收藏
页码:27 / 30
页数:4
相关论文
共 22 条
[1]   ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].
ANDO, T ;
FOWLER, AB ;
STERN, F .
REVIEWS OF MODERN PHYSICS, 1982, 54 (02) :437-672
[2]   TEMPERATURE-DEPENDENT RESISTIVITIES IN SILICON INVERSION-LAYERS AT LOW-TEMPERATURES [J].
CHAM, KM ;
WHEELER, RG .
PHYSICAL REVIEW LETTERS, 1980, 44 (22) :1472-1475
[3]   Charged impurity-scattering-limited low-temperature resistivity of low-density silicon inversion layers [J].
Das Sarma, S ;
Hwang, EH .
PHYSICAL REVIEW LETTERS, 1999, 83 (01) :164-167
[4]  
DASSARMA S, 1999, CONDMAT9909452
[5]  
DOLGOPOLOV VT, 1992, JETP LETT+, V55, P733
[6]   METAL-INSULATOR-TRANSITION IN ALXGA1-XAS/GAAS HETEROSTRUCTURES WITH LARGE SPACER WIDTH [J].
GOLD, A .
PHYSICAL REVIEW B, 1991, 44 (16) :8818-8824
[7]   TEMPERATURE-DEPENDENCE OF MOBILITY IN ALXGA1-XAS/GAAS HETEROSTRUCTURES FOR IMPURITY SCATTERING [J].
GOLD, A .
PHYSICAL REVIEW B, 1990, 41 (12) :8537-8540
[8]   The local-field correction for the interacting electron gas: Many-body effects for unpolarized and polarized electrons [J].
Gold, A .
ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1997, 103 (3-4) :491-500
[9]   TEMPERATURE-DEPENDENCE OF THE CONDUCTIVITY FOR THE TWO-DIMENSIONAL ELECTRON-GAS - ANALYTICAL RESULTS FOR LOW-TEMPERATURES [J].
GOLD, A ;
DOLGOPOLOV, VT .
PHYSICAL REVIEW B, 1986, 33 (02) :1076-1084
[10]   SCALING OF AN ANOMALOUS METAL-INSULATOR-TRANSITION IN A 2-DIMENSIONAL SYSTEM IN SILICON AT B=O [J].
KRAVCHENKO, SV ;
MASON, WE ;
BOWKER, GE ;
FURNEAUX, JE ;
PUDALOV, VM ;
DIORIO, M .
PHYSICAL REVIEW B, 1995, 51 (11) :7038-7045