Magnetoresistance of a two-dimensional electron gas in a parallel magnetic field

被引：163

作者：

Dolgopolov, VT ^{[1
]}

Gold, A

机构：

[1] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow Oblast, Russia

[2] CNRS, Ctr Elaborat Mat & Etud Struct, F-31055 Toulouse, France

来源：

JETP LETTERS | 2000年 / 71卷 / 01期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/1.568270

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The conductivity of a two-dimensional electron gas in a parallel magnetic field is calculated. We take into account the magnetic-field-induced spin-splitting, which changes the density of states, the Fermi momentum, and the screening behavior of the electron gas. For impurity scattering, we predict a positive magnetoresistance for low electron density and a negative magnetoresistance for high electron density. The theory is in qualitative agreement with recent experimental results found for Si inversion layers and Si quantum wells. (C) 2000 MAIK "Nauka/Interperiodica".

引用

页码：27 / 30

页数：4

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