40-GHz coplanar waveguide bandpass filters on silicon substrate

被引：34

作者：

Chan, KT ^{[1
]}

Chen, CY

Chin, A

Hsieh, JC

Liu, J

Duh, TS

Lin, WJ

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30050, Taiwan

[2] United Microelect Cooperat, Hsinchu, Taiwan

[3] Inst Nucl Energy Res, Taoyuan, Taiwan

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2002年 / 12卷 / 11期

关键词：

D O I：

10.1109/LMWC.2002.805535

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a very simple process to fabricate high performance filter on Si at 40 GHz; using proton implantation. The filter has only -3.4-dB loss at peak transmission of 40 GHz; with a broad 9-GHz bandwidth. In sharp contrast, the filter on 1.5-mum SiO2 isolated Si has much worse transmission and reflection loss. This is the first demonstration of high performance filter at millimeter-wave regime on Si with process compatible to current VLSI technology.

引用

页码：429 / 431

页数：3

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