The performance limiting factors as RF MOSFETs scaling down

被引：27

作者：

Wu, YH ^{[1
]}

Chin, A ^{[1
]}

Liang, CS ^{[1
]}

Wu, CC ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

来源：

2000 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2000年

关键词：

D O I：

10.1109/RFIC.2000.854437

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The measured RF performance of 0.5, 0.25, and 0.18 mum MOSFETs gradually saturates as scaling down, which can be explained by the derived analytical equation and simulation. The overlap C-gd and non-quasi-static effect are the main factors but scales much slower than L-g.

引用

页码：151 / 154

页数：4

共 4 条

[1] EFFECTS OF THE GATE-TO-DRAIN SOURCE OVERLAP ON MOSFET CHARACTERISTICS [J].