Improved electrical characteristics of CoSi2 using HF-vapor pretreatment

被引：12

作者：

Wu, YH ^{[1
]}

Chen, WJ

Chang, SL

Chin, A

Gwo, S

Tsai, C

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Natl Yun Lin Polytech Inst, Dept Mech Mat Engn, Huwei 632, Taiwan

[3] Natl Tsing Hua Univ, Dept Phys, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 1999年 / 20卷 / 05期

关键词：

D O I：

10.1109/55.761014

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed a simple process to form epitaxial CoSi2 for shallow junction. Prior to metal deposition, the patterned wafers were treated with HF-vapor passivation. As observed by scanning tunneling microscopy (STM), this HF, treatment drastically improves the native oxide-induced sur face roughness. The epitaxial behavior was confirmed by cross-sectional transmission electron microscopy (TEM), Decreased sheet resistance and leakage current, and improved thermal stability are displayed by the HF treated samples, which is consistent with STM and TEM results.

引用

页码：200 / 202

页数：3

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