SIMULTANEOUS SHALLOW-JUNCTION FORMATION AND GATE DOPING P-CHANNEL METAL-SEMICONDUCTOR-OXIDE FIELD-EFFECT TRANSISTOR PROCESS USING COBALT SILICIDE AS A DIFFUSION DOPING SOURCE

Submicron p-metal-semiconductor-oxide field-effect transistors (MOSFETs) have been fabricated using cobalt silicide as a diffusion source for forming shallow p-n junctions and as a doping source for undoped as-deposited amorphous silicon gate (SADDS). The thermal stability of CoSi2 on polycrystalline silicon is shown to be significantly improved by using as-deposited amorphous silicon instead of as-deposited polycrystalline silicon as the gate material. The p-MOSFETs fabricated using the SADDS process exhibit excellent characteristics and open up the possibility of eliminating several masks and implants in more complicated complimentary metal-oxide semiconductor processes.