INTERACTION OF CO WITH SI AND SIO2 DURING RAPID THERMAL ANNEALING

被引：31

作者：

CHEN, WD

CUI, YD

HSU, CC

TAO, J

机构：

[1] ACAD SINICA,NATL LAB SURFACE PHYS,BEIJING 100080,PEOPLES R CHINA

[2] BEIJING UNIV,INST MICROELECTR,BEIJING,PEOPLES R CHINA

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 11期

关键词：

D O I：

10.1063/1.347530

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The interaction of Co with Si and SiO2 during rapid thermal annealing has been investigated. Phase sequence, layer morphology, and reaction kinetics were studied by sheet resistance, x-ray diffraction, Auger electron spectroscopy, x-ray photoelectron spectroscopy, and scanning electron microscopy. With increasing annealing temperature, Co film on Si(100) is transformed sequentially into Co2Si, CoSi, and finally CoSi2 which corresponds to the minimum of sheet resistance. No evidence of silicide formation was observed for Co/SiO2 annealed even at the high temperature of 1050-degrees-C.

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页码：7612 / 7619

页数：8

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