COBALT DISILICIDE - CRYSTAL-GROWTH AND PHYSICAL-PROPERTIES

[1] SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 643 - 646

[2] PHOTOEMISSION AND BAND-STRUCTURE RESULTS FOR NISI-2 [J]. PHYSICAL REVIEW B, 1982, 25 (12): : 7598 - 7602

[3] CRYSTAL-GROWTH OF REFRACTORY COMPOUNDS FROM SOLUTIONS IN METALLIC MELTS [J]. PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1983, 6 (01): : 59 - 101

[4] STUDY OF THE UNIFORMITY AND STOICHIOMETRY OF COSI2 FILMS USING RUTHERFORD BACKSCATTERING SPECTROSCOPY AND SCANNING ELECTRON-MICROSCOPY [J]. APPLIED PHYSICS LETTERS, 1983, 43 (07) : 660 - 662

[5] EPITAXIAL-GROWTH OF ELEMENTAL SEMICONDUCTOR-FILMS ONTO SILICIDE/SI AND FLUORIDE/SI STRUCTURES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 266 - 271

[6] ELECTRICAL-PROPERTIES OF THIN CO2SI, COSI, AND COSI2 LAYERS GROWN ON EVAPORATED SILICON [J]. JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (01) : 95 - 105

[7] Nicolet M.-A., 1983, MAT PROCESS CHARACTE, VVolume 6, P329

[8] Samsonov G.V., 1980, HDB REFRACTORY COMPO

[9] BONDING AND STRUCTURE OF COSI2 AND NISI2 [J]. PHYSICAL REVIEW B, 1983, 28 (02): : 1168 - 1170

[10] GROWTH OF SINGLE-CRYSTAL COSI2 ON SI (111) [J]. APPLIED PHYSICS LETTERS, 1982, 40 (08) : 684 - 686

[1] SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 643 - 646

[2] PHOTOEMISSION AND BAND-STRUCTURE RESULTS FOR NISI-2 [J]. PHYSICAL REVIEW B, 1982, 25 (12): : 7598 - 7602

[3] CRYSTAL-GROWTH OF REFRACTORY COMPOUNDS FROM SOLUTIONS IN METALLIC MELTS [J]. PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1983, 6 (01): : 59 - 101

[4] STUDY OF THE UNIFORMITY AND STOICHIOMETRY OF COSI2 FILMS USING RUTHERFORD BACKSCATTERING SPECTROSCOPY AND SCANNING ELECTRON-MICROSCOPY [J]. APPLIED PHYSICS LETTERS, 1983, 43 (07) : 660 - 662

[5] EPITAXIAL-GROWTH OF ELEMENTAL SEMICONDUCTOR-FILMS ONTO SILICIDE/SI AND FLUORIDE/SI STRUCTURES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 266 - 271

[6] ELECTRICAL-PROPERTIES OF THIN CO2SI, COSI, AND COSI2 LAYERS GROWN ON EVAPORATED SILICON [J]. JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (01) : 95 - 105

[7] Nicolet M.-A., 1983, MAT PROCESS CHARACTE, VVolume 6, P329

[8] Samsonov G.V., 1980, HDB REFRACTORY COMPO

[9] BONDING AND STRUCTURE OF COSI2 AND NISI2 [J]. PHYSICAL REVIEW B, 1983, 28 (02): : 1168 - 1170

[10] GROWTH OF SINGLE-CRYSTAL COSI2 ON SI (111) [J]. APPLIED PHYSICS LETTERS, 1982, 40 (08) : 684 - 686