AES AND XPS ANALYSIS OF THE INTERACTION OF TI WITH SI AND SIO2 DURING RTA

被引：70

作者：

BENDER, H

CHEN, WD

PORTILLO, J

VANDENHOVE, L

VANDERVORST, W

机构：

来源：

APPLIED SURFACE SCIENCE | 1989年 / 38卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(89)90516-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：37 / 47

页数：11

共 13 条

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