EFFECTS OF THE GATE-TO-DRAIN SOURCE OVERLAP ON MOSFET CHARACTERISTICS

被引：21

作者：

CHAN, TY

WU, AT

KO, PK

HU, CM

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 07期

关键词：

D O I：

10.1109/EDL.1987.26647

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：326 / 328

页数：3

共 8 条

[1] A CAPACITANCE METHOD TO DETERMINE THE GATE-TO-DRAIN SOURCE OVERLAP LENGTH OF MOSFETS [J].

CHAN, TY ;

WU, AT ;

KO, PK ;

HU, CM .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (06) :269-271

[2] ASYMMETRICAL CHARACTERISTICS IN LDD AND MINIMUM-OVERLAP MOSFETS [J].

CHAN, TY ;

WU, AT ;

KO, PK ;

HU, CM ;

RAZOUK, RR .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (01) :16-19

[3]

Hsu F.-C., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P48

[4] STRUCTURE-ENHANCED MOSFET DEGRADATION DUE TO HOT-ELECTRON INJECTION [J].

HSU, FC ;

GRINOLDS, HR .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (03) :71-74

[5] SUBMICROMETER DEVICE DESIGN FOR HOT-ELECTRON RELIABILITY AND PERFORMANCE [J].

HUI, J ;

MOLL, J .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (07) :350-352

[6]

Ko P. K., 1983, International Electron Devices Meeting 1983. Technical Digest, P751

[7]

Ko P. K., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P292

[8]

Mizuno T., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P250

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