Realistic projections of product fails from NBTI and TDDB

被引：21

作者：

Haggag, A. ^{[1
]}

Moosa, M. ^{[1
]}

Liu, N. ^{[1
]}

Burnett, D. ^{[1
]}

Abeln, G. ^{[1
]}

Kuffler, M. ^{[1
]}

Forbes, K. ^{[1
]}

Schani, P. ^{[1
]}

Shroff, M. ^{[1
]}

Hall, M. ^{[1
]}

Paquette, C. ^{[1
]}

Anderson, G. ^{[1
]}

Pan, D. ^{[1
]}

Cox, K. ^{[1
]}

Higman, J. ^{[1
]}

Mendicino, M. ^{[1
]}

Venkatesan, S. ^{[1
]}

机构：

[1] Freescale Semicond Inc, 3501 Ed Bluestein Blvd,MD K-10, Austin, TX 78721 USA

来源：

2006 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 44TH ANNUAL | 2006年

关键词：

D O I：

10.1109/RELPHY.2006.251276

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Statistical models' for deconvolving the effects of competing mechanisms on product failures arc! presented. Realistic projections of product fails are demonstrated on high performance microprocessors by quantifying the contribution of NBTI, TDDB and extrinsic fail mechanisms. In particular, it is shown that transistor shifts due to NBTI manifest as population tails in the product's minimum operating voltage (Vmin) distribution, while TDDB manifests as single-bit or logic failures that constitute a separate sub-population. NBTI failures are characterized by Lognormal statistics combined with a slower degradation rate (Delta Vt similar to t(0.15)-t(0.25)), in contrast to TDDB failures that follow extreme-value statistics and exhibit a faster degradation rate (Delta Vt similar to t(0.5)).

引用

页码：541 / +

页数：2

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