Doping Dependence of the Raman Spectrum of Defected Graphene

被引：325

作者：

Bruna, Matteo ^{[1
]}

Ott, Anna K. ^{[1
]}

Ijaes, Mari ^{[1
]}

Yoon, Duhee ^{[1
]}

Sassi, Ugo ^{[1
]}

Ferrari, Andrea C. ^{[1
]}

机构：

[1] Univ Cambridge, Cambridge Graphene Ctr, Cambridge CB3 0FA, England

来源：

ACS NANO | 2014年 / 8卷 / 07期

基金：

英国工程与自然科学研究理事会;

关键词：

graphene; Raman spectroscopy; defects; D PEAK; D-BAND; SPECTROSCOPY; SCATTERING; CARBON; FILMS; ELECTRON; ORIGIN;

D O I：

10.1021/nn502676g

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We investigate the evolution of the Raman spectrum of defected graphene as a function of doping. Polymer electrolyte gating allows us to move the Fermi level up to 0.7 eV, as directly monitored by in situ Hall-effect measurements. For a given number of defects, we find that the intensities of the D and D' peaks decrease with increasing doping. We assign this to an increased total scattering rate of the photoexcited electrons and holes, due to the doping-dependent strength of electron-electron scattering. We present a general relation between D peak intensity and defects valid for any doping level.

引用

页码：7432 / 7441

页数：10

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