Low Temperature Raman Study of the Electron Coherence Length near Graphene Edges

被引：70

作者：

Beams, Ryan ^{[1
]}

Cancado, Luiz Gustavo ^{[2
]}

Novotny, Lukas ^{[1
]}

机构：

[1] Univ Rochester, Inst Opt, Rochester, NY 14627 USA

[2] Univ Fed Minas Gerais, Dept Fis, BR-30123970 Belo Horizonte, MG, Brazil

来源：

NANO LETTERS | 2011年 / 11卷 / 03期

关键词：

Graphene; optical properties; Raman scattering; spectroscopy; defects; localization; SCATTERING;

D O I：

10.1021/nl104134a

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We developed a novel optical defocusing method for studying spatial coherence of photoexcited electrons and holes near edges of graphene. Our method is applied to measure the localization l(D) of the disorder-induced Raman D band (similar to 1350 cm(-1)) with a resolution of a few nanometers. Raman scattering experiments performed in a helium bath cryostat reveal that as temperature is decreased from 300 to 1.55 K, the length l(D) increases. We found that the localization of the D band varies as 1/T-1/2, giving strong evidence that l(D) scales with the coherence length of photoexcited electrons near graphene edges.

引用

页码：1177 / 1181

页数：5

共 29 条

[1] Ballistic transport in graphene nanostrips in the presence of disorder: Importance of edge effects [J].