An Essential Mechanism of Heat Dissipation in Carbon Nanotube Electronics

被引：105

作者：

Rotkin, Slava V. ^{[1
,2
]}

Perebeinos, Vasili ^{[3
]}

Petrov, Alexey G. ^{[4
]}

Avouris, Phaedon ^{[3
]}

机构：

[1] Lehigh Univ, Dept Phys, Bethlehem, PA 18015 USA

[2] Lehigh Univ, Ctr Adv Mat & Nanotechnol, Bethlehem, PA 18015 USA

[3] IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

[4] Ioffe Inst, St Petersburg 194021, Russia

来源：

NANO LETTERS | 2009年 / 9卷 / 05期

关键词：

PHONON-SCATTERING; INVERSION-LAYERS; TRANSPORT; RESISTANCE; SUBSTRATE; QUARTZ;

D O I：

10.1021/nl803835z

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Excess heat generated in integrated circuits is one of the major problems of modern electronics. Surface phonon-polariton scattering is shown here to be the dominant mechanism for hot charge carrier energy dissipation in a nanotube device fabricated on a polar substrate, such as SiO2. By use of microscopic quantum models, the Joule losses were calculated for the various energy dissipation channels as a function of the electric field, doping, and temperature. The polariton mechanism must be taken into account to obtain an accurate estimate of the effective thermal coupling of the nonsuspended nanotube to the substrate, which was found to be 0.1-0.2 W/(m.K) even in the absence of the bare phononic thermal coupling.

引用

页码：1850 / 1855

页数：6

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