Polariton emission and reflectivity in GaN microcavities as a function of angle and temperature

被引：6

作者：

Sellers, I. R.

Semond, F.

Leroux, M.

Massies, J.

Zamfirescu, M.

Stokker-Cheregi, F.

Gurioli, M.

Vinattieri, A.

Colocci, M.

Tahraoui, A.

Khalifa, A. A.

机构：

[1] CNRS, CRHEA, F-06560 Valbonne, France

[2] Univ Florence, Dipartimento Fis, LENS, I-50019 Sesto Fiorentino, Italy

[3] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

来源：

PHYSICAL REVIEW B | 2006年 / 74卷 / 19期

关键词：

D O I：

10.1103/PhysrevB.74.193308

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We demonstrate strong light-matter coupling at room temperature in a GaN microcavity using simultaneous reflectivity and photoluminescence measurements. At 10 K strong coupling is also observed in both measurements despite the well-known dominance of GaN emission at low temperature by localized neutral donor bound excitons. In addition, the strong light-matter coupling regime is studied as a function of temperature with the tuning of the polariton modes, in this case a result due to the dominant redshift of the excitonlike branch with increasing temperature.

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页数：4

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