Background charge fluctuation in a GaAs quantum dot device

被引：83

作者：

Jung, SW

Fujisawa, T

Hirayama, Y

Jeong, YH

机构：

[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

[2] Pohang Univ Sci & Technol, Pohang 790784, Kyungpook, South Korea

[3] Tokyo Inst Technol, Meguro Ku, Tokyo 1528550, Japan

[4] JST, SORST, Kawaguchi, Saitama 3310012, Japan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 05期

关键词：

D O I：

10.1063/1.1777802

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate background charge fluctuation in a GaAs quantum dot device by measuring 1/f noise in the single-electron tunneling current through the dot. The current noise is understood as fluctuations of the confinement potential and tunneling barriers. The estimated potential fluctuation increases almost linearly with temperature, which is consistent with a simple model of the 1/f noise. We find that the fluctuation increases very slightly when electrons are injected into excited states of the quantum dot. (C) 2004 American Institute of Physics.

引用

页码：768 / 770

页数：3

共 15 条

[1]

[Anonymous], NATO ASI SERIES B

[2] Impedance analysis of a radio-frequency single-electron transistor [J].