Highly Stretchable Transistors Using a Microcracked Organic Semiconductor

被引：214

作者：

Chortos, Alex ^{[1
]}

Lim, Josh ^{[1
]}

To, John W. F. ^{[1
]}

Vosgueritchian, Michael ^{[1
]}

Dusseault, Thomas J. ^{[1
]}

Kim, Tae-Ho ^{[2
]}

Hwang, Sungwoo ^{[2
]}

Bao, Zhenan ^{[1
]}

机构：

[1] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA

[2] Samsung Adv Inst Technol, Nano Elect Lab, Suwon 443803, South Korea

来源：

ADVANCED MATERIALS | 2014年 / 26卷 / 25期

关键词：

FIELD-EFFECT TRANSISTORS; HIGH-PERFORMANCE ELECTRONICS; REGIOREGULAR POLY(3-HEXYLTHIOPHENE); SKIN APPLICATIONS; STRAIN SENSORS; HIGH-MOBILITY; LARGE-AREA; PRESSURE; CIRCUITS; DEVICES;

D O I：

10.1002/adma.201305462

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Organic transistors with elastic conductors and dielectrics can be stretched up to 250% strain while maintaining the transistor characteristics. Strain-independent properties can be achieved after an initial "programming" cycle that causes the formation of microcracks in the semiconductor. The change in mobility with strain follows the same trend in different stretching directions.

引用

页码：4253 / 4259

页数：7

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