Preliminary results about a sol-gel process for the synthesis of precursor solutions of ferroelectric layered perovskite thin films

被引：1

作者：

Calzada, ML ^{[1
]}

González, A ^{[1
]}

Jiménez, R ^{[1
]}

Mendiola, YJ ^{[1
]}

机构：

[1] CSIC, Inst Ciencia Mat Madrid, E-28049 Madrid, Spain

来源：

BOLETIN DE LA SOCIEDAD ESPANOLA DE CERAMICA Y VIDRIO | 1999年 / 38卷 / 05期

关键词：

thin film; sol-gel; layered perovskite; ferroelectric;

D O I：

10.3989/cyv.1999.v38.i5.933

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

SrBi2Ta2O9 precursor solutions have been prepared by sol-gel using, as reactives, tantalum ethoxide and strontium and bismuth 2-ethyl-hexanoates. These compounds were disolved in 1,3-propanediol as majoritary solvent. The resulting solutions had low hydrolysis and condensation, thus making possible their manipulation and storage in atmospheres with moisture. Films deposited from these solutions were crystallised at 750 degrees C, developing, as majoritary phase, the SrBi2Ta2O9 layered perovskite. Electric poling of these films indicates a moderate ferroelectric response with values of remanent polarisation of Pr-1 mu C/cm(2).

引用

页码：464 / 467

页数：4

共 9 条

[1] The physics of ferroelectric memories [J].