Extensions of the Chalmers nonlinear HEMT and MESFET model

被引：214

作者：

Angelov, I

Bengtsson, L

Garcia, M

机构：

[1] Department of Microwave Technology, Chalmers University of Technology

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1996年 / 44卷 / 10期

关键词：

D O I：

10.1109/22.538957

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The ability to simulate temperature, dispersion, and soft-breakdown effects as sell as a new a dependence was added to the Chalmers nonlinear model for high electron mobility transistor (HEMT's) and metal semiconductor field-effect transistor (MESFET's). DC, pulsed de, low frequency (10 Hz-10 MHz), RF, and small signal S-parameter measurements (1-18 GHz) have been made on a large number of commercial HEMT and MESFET devices from different manufacturers in the temperature range 17-400 K in order to evaluate the validity of the model extensions.

引用

页码：1664 / 1674

页数：11

共 25 条

[1]

ANGELOV I, 1994, IEEE MTT-S, P1571, DOI 10.1109/MWSYM.1994.335274

[2] A NEW EMPIRICAL NONLINEAR MODEL FOR HEMT AND MESFET DEVICES [J].