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DEVICE LINEARITY IMPROVEMENT BY AL0.3GA0.7AS/IN0.2GA0.8AS HETEROSTRUCTURE DOPED-CHANNEL FETS

被引：41
作者：
CHAN, YJ
YANG, MT
机构：
[1] Department of Electrical Engineering, National Central University
来源：
IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 01期
关键词：
D O I：
10.1109/55.363208
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The linearities of pseudomorphic heterostructure Al0.3Ga0.7As/In0.2Ga0.8As doped-channel FET's (DCFET's) and HEMT's were evaluated by DC and RF testings. Due to the absence of parallel conduction in the doped-channel approach, as compared to the modulation-doped structure, a wide and flat device performance together with a high current density was achieved. This improvement of device linearity suggests that doped-channel designs are suitable for high frequency power device application.
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页码：33 / 35
页数：3
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